Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2020, p. 49-51…続きを読む
Electrochemical reaction analysis using density functional calculation + implicit solvation model 2
ISSP Activity Report 2020, p. 71-72…続きを読む
Extension of susceptibilities, screened exchange and spin-fluctuation integrals into ultrasoft pseudopotentials
ISSP Activity Report 2021, p. 305-306…続きを読む
Mechanism of quantum spin liquid and high-Tc superconductivity studied by excitation spectra and nonequilibrium dynamics calculation by Variational Monte Carlo methods
ISSP Activity Report 2019, p. 197-199…続きを読む
Prediction of properties of organic ferroelectrics and piezoelectrics by first-principles calculation
ISSP Activity Report 2021, p. 121-122…続きを読む
Search and realization of novel electronic properties of solid surfaces and interfaces and of small particles
ISSP Activity Report 2020, p. 163-164…続きを読む
Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2019, p. 44-46…続きを読む
First-principles study on atomic and electronic structures of graphene/SiC interfaces
ISSP Activity Report 2021, p. 64…続きを読む
Confirmation of stress-overshoot phenomena under biaxial elongational flow of ring-linear mixtures
ISSP Activity Report 2020, p. 163-164…続きを読む
Ab initio phonon calculation for Ca5Ir3O12
ISSP Activity Report 2019, p. 66-67…続きを読む