Ab initio phonon calculation for Ca5Ir3O12
ISSP Activity Report 2019, p. 66-67…続きを読む
Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2019, p. 44-46…続きを読む
Atomic and electronic structures of intermetallic compound catalysts
ISSP Activity Report 2019, p. 162…続きを読む
Study on physical properties of structural elementary excitations of semiconductor surfaces and interfaces
ISSP Activity Report 2019, p. 45-46…続きを読む
First principles study on leaking current at a dislocation in doped semiconductors
ISSP Activity Report 2019, p. 151-152…続きを読む
First-principles calculations of thermoelectric properties in magnetic materials
ISSP Activity Report 2019, p. 70-71…続きを読む
First-principles calculation of thermophysical properties of solids with strong phonon anharmonicity
ISSP Activity Report 2019, p. 15-24…続きを読む
First-principles Theoretical Study of Chemical Reactions in Heterogeneous Catalysts
ISSP Activity Report 2019, p. 95-96…続きを読む
Electrochemical Reaction Analysis Using Density Functional Calculation + Implicit Solvation Model
ISSP Activity Report 2019, p. 80-81…続きを読む
Ab Initio Calculation of High-Rate Deposition of Copper Film by Low-Pressure Chemical Vapor Deposition with CuI on Ru Substrate
ISSP Activity Report 2019, p. 158…続きを読む