Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2019, p. 44-46…続きを読む
First-principles Theoretical Study of Chemical Reactions in Heterogeneous Catalysts
ISSP Activity Report 2019, p. 95-96…続きを読む
First Principles Calculation of 2-Dimensional Silicides Formed on Nickel Surfaces
ISSP Activity Report 2019, p. 181-182…続きを読む
First principles study on leaking current at a dislocation in doped semiconductors
ISSP Activity Report 2019, p. 151-152…続きを読む
Ab Initio Calculation of High-Rate Deposition of Copper Film by Low-Pressure Chemical Vapor Deposition with CuI on Ru Substrate
ISSP Activity Report 2019, p. 158…続きを読む
Atomic and electronic structures of intermetallic compound catalysts
ISSP Activity Report 2019, p. 162…続きを読む
Ab initio phonon calculation for Ca5Ir3O12
ISSP Activity Report 2019, p. 66-67…続きを読む