Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2019, p. 44-46…続きを読む
Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2020, p. 49-51…続きを読む
First principles study on leaking current at a dislocation in doped semiconductors
ISSP Activity Report 2019, p. 151-152…続きを読む
Atomic and electronic structures of intermetallic compound catalysts
ISSP Activity Report 2019, p. 162…続きを読む
First Principles Calculation of 2-Dimensional Silicides Formed on Nickel Surfaces
ISSP Activity Report 2019, p. 181-182…続きを読む
First-principles study on atomic and electronic structures of graphene/SiC interfaces
ISSP Activity Report 2021, p. 64…続きを読む
Quantum Simulations on Dynamical Heterogeneous Catalysts
ISSP Activity Report 2020, p. 61-62…続きを読む
Study on structural elementary excitations at semiconductor surfaces and interfaces
ISSP Activity Report 2020, p. 166…続きを読む
Extension of susceptibilities, screened exchange and spin-fluctuation integrals into ultrasoft pseudopotentials
ISSP Activity Report 2021, p. 305-306…続きを読む
First-principles calculation of thermophysical properties of solids with strong phonon anharmonicity
ISSP Activity Report 2019, p. 15-24…続きを読む