事例・論文
Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2019, p. 44-46…続きを読む
First-principles study on complexes of impurity and dislocation in GaN p-n diodes
ISSP Activity Report 2020, p. 170…続きを読む
Mechanisms of Semiconductor Interface Formation and its Electronic Properties based on Quantum Theory
ISSP Activity Report 2020, p. 49-51…続きを読む